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ZXMN3B14F
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
(1)
Resistance
Forward Transconductance (1) (3)
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
g fs
30
0.7
8.5
1
100
0.080
0.140
V
A
nA
V
S
I D = 250 A, V GS =0V
V DS = 30V, V GS =0V
V GS = 12V, V DS =0V
I D = 250 A, V DS =V GS
V GS = 4.5V, I D = 3.1A
V GS = 2.5V, I D = 2.2A
V DS = 15V, I D = 3.1A
DYNAMIC (3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C iss
C oss
C rss
568
101
66
pF
pF
pF
V DS = 15V, V GS =0V
f=1MHz
SWITCHING (2) (3)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
3.6
4.9
17.3
9.8
6.7
1.4
1.8
ns
ns
ns
ns
nC
nC
nC
V DD = 15V, V GS = 4.5V
I D = 1A
R G ? 6.0
V DS = 15V, V GS = 4.5V
I D = 3.1A
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V SD
0.82
0.95
V
T j =25°C, I S = 3.1A,
V GS =0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
t rr
Q rr
10.8
4.54
ns
nC
T j =25°C, I F = 1.6A,
di/dt=100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JANUARY 2006
SEMICONDUCTORS
4
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